International Congress of New Electronic Devices organized by the IUMA, May 22-24

He IUMA organizes the 41 edition of the International Congress of Devices and Integrated Circuits in Composite Semiconductor Materials, WOCSDICE 2017. It takes place at the AC Hotel, next to the Elder museum in the capital, from May 22 to 24. The President of Congress is Benito Gonzalez, from the IUMA. Professors co-chair the congress Dimitris Pavlidis (Boston University and National Science Foundation, USA) and Hans Hartnagel (Universität Darmstadt, Germany).

This congress is the oldest and most pioneering in electronics not based on Silicon (element from group IV of the periodic table), that is, with material systems composed of elements from groups III-V or II-VI, or various combinations including others. group IV elements such as Carbon (Graphene, Diamond). These semiconductor materials are characterized by a high separation of electron energy levels between their valence orbitals and their conduction orbitals, and are destined to dominate the market for high-power applications in electrical conversion, radio frequency, solar cells, lasers or LEDs.

Among the topics to be examined with the most striking results are devices on Graphene, devices on Diamond, Tellurium-Cadmium-Mercury devices for very high efficiency photovoltaic panels, sensors based on nitrides, electrical power amplifiers for converters -chargers and electric vehicles based on gallium nitride, radio frequency amplifiers based on gallium and aluminum nitrides, lasers, blue and white LEDs, etc.

Throughout the three days, 8 main outstanding presentations will be presented by scientific personalities from the USA (5), Taiwan, Holland, and Spain, and 59 regular presentations submitted by 219 authors, including two works by scientists from the IUMA, the group directed by Benito González and the group directed by Javier del Pino. To date, 70 participants from 17 countries have registered: the US, 13 European countries including the United Kingdom, Russia and Belarus, and 3 Asian countries Japan, India and Taiwan.

By country, the delegates are distributed as follows: Germany and Spain (Peninsula) 8 participants, USA, France and Italy 6, United Kingdom and Slovakia 5, Japan, Belgium, Austria and Belarus 3, Portugal 2, Russia, India, Taiwan , Holland and Poland 1, and 7 participants from the Canary Islands. By field, 37 are researchers from universities or university research institutes, 18 are from large state scientific research centers, and 15 are from manufacturing industries.

The Steering Committee of this prestigious conference series is made up of 19 scientists from the universities ETH Zürich, Boston University, Texas State University, Cardiff University, Chalmers University of Technology, University of Bristol, RWTH Aachen, CNRS France, Technical University of Darmstadt, Universitá di Padova, Université de Lille, University of Toyama, Politécnica de Madrid, Slovak University of Technology, Universidade do Aveiro, Ferdinand Braun Institut, National Science Foundation of USA and National Foundation for Research and Technology-Hellas of Greece.

The congress also presents results from the international industrial research projects on Gallium Nitrides, AGATE and POWERBASE, in which the IUMA, the National Microelectronics Center CNM and Spanish industries such as GreenPower participate.

The ISOM and IMM Microelectronics Institutes of Madrid and the IUMA of ULPGC have been pioneers in Spain in the 1980s in obtaining and designing III-V compound semiconductor devices.

The information on the program and details of the congress is available to download or consult at:
Official Web WOCSDICE 2017

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The main presentations are the following:

• Prof. Edward Yi Chang (Taiwan) – InGaAs FinFET for Next Generation CMOS Application
• Dr. José L. Jiménez (USA) – Current Understanding of Basestation Linearity on GaN Power amplifiers and the influence of starting material
• Dr. Peter Offermans (Netherlands) – GaN based gas sensing
• Prof. Michael Shur (USA) – THz Devices Using Graphene
• Dr. Yuanxun Ethan Wang (USA) – Non-Reciprocal, Parametric Amplification of Electromagnetic Waves for Future Generation of RF Front-Ends
• Prof. Timothy Grotjohn (USA) – Diamond Electronic Device Technology
• Dr. Pil Sung Park (USA) – Vertical transport in Metal/Graphene/AlGaN/GaN structure
• Prof. Benjamín Iñiguez (Spain) – Physically-Based Compact Modeling of AlGaN/GaN HEMTs